Commit 7beb37e5 authored by Boris Brezillon's avatar Boris Brezillon Committed by Miquel Raynal

mtd: rawnand: Use nanddev_mtd_max_bad_blocks()

nanddev_mtd_max_bad_blocks() is implemented by the generic NAND layer
and is already doing what we need. Reuse this function instead of
having our own implementation.

While at it, get rid of the ->max_bb_per_die and ->blocks_per_die
fields which are now unused.
Signed-off-by: default avatarBoris Brezillon <bbrezillon@kernel.org>
Signed-off-by: default avatarMiquel Raynal <miquel.raynal@bootlin.com>
Reviewed-by: default avatarFrieder Schrempf <frieder.schrempf@kontron.de>
parent d974541e
......@@ -4297,42 +4297,6 @@ static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
return nand_block_markbad_lowlevel(mtd_to_nand(mtd), ofs);
}
/**
* nand_max_bad_blocks - [MTD Interface] Max number of bad blocks for an mtd
* @mtd: MTD device structure
* @ofs: offset relative to mtd start
* @len: length of mtd
*/
static int nand_max_bad_blocks(struct mtd_info *mtd, loff_t ofs, size_t len)
{
struct nand_chip *chip = mtd_to_nand(mtd);
u32 part_start_block;
u32 part_end_block;
u32 part_start_die;
u32 part_end_die;
/*
* max_bb_per_die and blocks_per_die used to determine
* the maximum bad block count.
*/
if (!chip->max_bb_per_die || !chip->blocks_per_die)
return -ENOTSUPP;
/* Get the start and end of the partition in erase blocks. */
part_start_block = mtd_div_by_eb(ofs, mtd);
part_end_block = mtd_div_by_eb(len, mtd) + part_start_block - 1;
/* Get the start and end LUNs of the partition. */
part_start_die = part_start_block / chip->blocks_per_die;
part_end_die = part_end_block / chip->blocks_per_die;
/*
* Look up the bad blocks per unit and multiply by the number of units
* that the partition spans.
*/
return chip->max_bb_per_die * (part_end_die - part_start_die + 1);
}
/**
* nand_suspend - [MTD Interface] Suspend the NAND flash
* @mtd: MTD device structure
......@@ -5819,7 +5783,7 @@ static int nand_scan_tail(struct nand_chip *chip)
mtd->_block_isreserved = nand_block_isreserved;
mtd->_block_isbad = nand_block_isbad;
mtd->_block_markbad = nand_block_markbad;
mtd->_max_bad_blocks = nand_max_bad_blocks;
mtd->_max_bad_blocks = nanddev_mtd_max_bad_blocks;
/*
* Initialize bitflip_threshold to its default prior scan_bbt() call.
......
......@@ -251,9 +251,6 @@ int nand_onfi_detect(struct nand_chip *chip)
memorg->bits_per_cell = p->bits_per_cell;
chip->bits_per_cell = p->bits_per_cell;
chip->max_bb_per_die = le16_to_cpu(p->bb_per_lun);
chip->blocks_per_die = le32_to_cpu(p->blocks_per_lun);
if (le16_to_cpu(p->features) & ONFI_FEATURE_16_BIT_BUS)
chip->options |= NAND_BUSWIDTH_16;
......
......@@ -1015,9 +1015,6 @@ struct nand_legacy {
* @id: [INTERN] holds NAND ID
* @parameters: [INTERN] holds generic parameters under an easily
* readable form.
* @max_bb_per_die: [INTERN] the max number of bad blocks each die of a
* this nand device will encounter their life times.
* @blocks_per_die: [INTERN] The number of PEBs in a die
* @data_interface: [INTERN] NAND interface timing information
* @cur_cs: currently selected target. -1 means no target selected,
* otherwise we should always have cur_cs >= 0 &&
......@@ -1076,8 +1073,6 @@ struct nand_chip {
struct nand_id id;
struct nand_parameters parameters;
u16 max_bb_per_die;
u32 blocks_per_die;
struct nand_data_interface data_interface;
......
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