mtd: nand: add generic READ RETRY support
Modern MLC (and even SLC?) NAND can experience a large number of bitflips (beyond the recommended correctability capacity) due to drifts in the voltage threshold (Vt). These bitflips can cause ECC errors to occur well within the expected lifetime of the flash. To account for this, some manufacturers provide a mechanism for shifting the Vt threshold after a corrupted read. The generic pattern seems to be that a particular flash has N read retry modes (where N = 0, traditionally), and after an ECC failure, the host should reconfigure the flash to use the next available mode, then retry the read operation. This process repeats until all bitfips can be corrected or until the host has tried all available retry modes. This patch adds the infrastructure support for a vendor-specific/flash-specific callback, used for setting the read-retry mode (i.e., voltage threshold). For now, this patch always returns the flash to mode 0 (the default mode) after a successful read-retry, according to the flowchart found in Micron's datasheets. This may need to change in the future if it is determined that eventually, mode 0 is insufficient for the majority of the flash cells (and so for performance reasons, we should leave the flash in mode 1, 2, etc.). Signed-off-by: Brian Norris <computersforpeace@gmail.com> Acked-by: Huang Shijie <b32955@freescale.com>
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